Multiple-band-edge quantum-well intermixing in the InGaAs/ InGaAsP/InGaP material system
نویسندگان
چکیده
The development of photonic integrated circuits lattice matched to GaAs are desirable for the manufacture of high-power, high-efficiency optical components. In this letter we investigate and describe a process technique based on quantum-well intermixing to achieve multiple band edges in the Al-free 980 nm InGaAs/ InGaAsP/InGaP material system. © 2005 American Institute of Physics. fDOI: 10.1063/1.1946903g
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تاریخ انتشار 2005